, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1146 description ? collector-emitter breakdown voltage- : v(br,ceo=- 140v(min) ? complement to type 2sc2706 applications ? audio frequency low power amplifier applications ? recommend for 70w audio frequency amplifier output stage applications absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value -140 -140 -5 -10 -1 100 150 -55-150 unit v v v a a w ?c 'c ja>, i 3 pin: l.base ; | i.ccllectcr i , 3. emitter 1 2 3 tc-3pi backage - b i " a ?? , ? + ._ _ 4h k ? ? n -*- c -*- ?? s *? ?*- ? - .t ; - , u : "* ' ji- * *" + z " \ j1 *-^j -?? ~^r-?~ dim a b c d f h j k l n q r s t u z mm min 19.60 15.30 4.00 0.90 3.20 2.90 0.50 19,90 1,20 10.80 4.40 3,30 1,40 1.00 2.10 7.90 max 20,10 15,70 4,60 1,10 3,40 3.10 0,70 21,30 220 11,00 4,60 3.35 1.60 1.20 2.30 9.10 c + ' i -*. --l -^-^-d nj soini-coniluctors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. information furnished by nj senii-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are currcnl before placina orders. quality semi-conductors
silicon pnp power transistor 2SA1146 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vbe(op) icbo iebo hpe-1 hfe-2 cob fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions \c= -50ma ; !b= 0 lc= -5a; ib= -0.5a lc= -5a ; vce= -5v vcb= -140v ; ie=0 veb= -5v; lc=0 lc=-1a;vce=-5v lc= -5a ; vce= -5v |e=0; vcb= -10v; ftest= 1.0mhz lc=-1a;vce=-10v min -140 55 30 typ. 220 70 max -2.0 -2.5 -50 -50 240 unit v v v u a u a pf mhz hpe-1 classifications r 55-110 o 80-160 y 120-240
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